GamuT Amplifiers

I am interested in, and have favorably auditioned, the GamuT Di-150 LE integrated amplifier. I am reading about their single pair of very large NPN transistors per channel. I’m wondering if there is a real electrical benefit to this approach vs multiple paralleled transistors. Gamut mentions that multiple paralleled transistors per channel used in most high end amplifiers lead to sonic smearing and phase Irregularities related to electrical and thermal differences in the multiple paralleled transistors. I do not have much technical background. Could it be that their approach may have only theoretical benefit vs multiple paralleled transistors. How about using only NPN pairs?  I’d appreciate your thoughts.