Sorry, but what you are stating may be applicable to the rest of the GaN MOSFET but that is not correct for the device we use in the Audion GaNTube88KT and I will be more than happy to describe to you why.
Without boring anyone with complex terms, in short, the reason is simple.
Since you know very well the difference between fixed D% (i.e Buck or Boost converter) and variable D% (i.e CLASS-D) operations, symmetrical HB and asymmetrical HB configurations, and among other things how important the stray inductance of the switching pair at the switching node is (we switch our power stages at ~800KHz but we could go much higher...), you should easily derive which parameters and physical elements of a semiconductor device (the 3 terminals switch) need to be optimized to make it operate at best in each different topology with the ultimate goal to obtain not just the best efficiency....but in our case, a great sound...and these parameters are not the same. I assure you ;)